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| smd type transistors sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1.65 +0.15 -0.15 0 .1max 0.90 +0.05 -0.05 12 4 3 1 base 2 collector 3 emitter bcp54; bcp55; bcp56 features high collector current 1.3 w power dissipation. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage bcp54 45 v bcp55 60 v bcp56 100 v collector-emitter voltage bcp54 45 v bcp55 60 v bcp56 80 v emitter-base voltage v ebo 5v collector current (dc) i c 1a peak collector current i cm 1.5 a peak base current i bm 0.2 a total power dissipation p tot 1.33 w storage temperature tstg -65to+150 junction temperature t j 150 operating ambient temperature t amb -65to+150 thermal resistance from junction to ambient r th j-a 94 k/w thermal resistance from junction to soldering point r th j-s 13 k/w v cbo v ceo smd type smd type smd type ic smd type smd type ic smd type smd type ic smd type smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i e =0a;v cb = 30 v 100 na i e =0a;v cb = 30 v; tj = 150 10 a emitter cut-off current i ebo i c =0a;v eb = 5 v 100 na i c =5ma;v ce =2v 63 i c =150 ma; v ce = 2 v 63 250 i c = 500 ma; v ce =2v 40 dc current gain BCP54-10; bcp55-10; bcp56-10 63 160 bcp54-16; bcp55-16; bcp56-16 100 250 collector-emitter saturation voltage v cesat i c =0.5a;i b = 50 ma 500 mv base-emitter voltage v be i c =0.5a;v ce =2v 1 v transition frequency f t i c =10ma;v ce = 5 v; f = 100 mhz 130 mhz dc current gain ratio of the complementary pairs |i c | = 150 ma;|v ce |=2v 1.6 collector cut-off current i cbo dc current gain h fe v ce =2v;i c = 150 ma h fe smd type transistors bcp54; bcp55; bcp56 smd type smd type smd type ic smd type smd type ic smd type smd type ic smd type smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123 |
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